Description
The spin degree-of-freedom is o?ering a wide range of intriguing oppor- nities both in fundamental as well as in applied solid-state physics. When combined with the rich and fertile physics of low-dimensional semicondu- ingstructuresandwiththepossibilitytochange,forexample,carrierdensity, electric ?elds or coupling to other quantum systems in a controlled way, an extremely exciting and interesting research ?eld is opened. Most comm- cial electronic devices are based on spin-independent charge transport. In the last two decades, however, scientists have been focusing on the ambitious objective of exploiting the spin degree-of-freedom of the electron to achieve novel functionalities. Ferromagnetic semiconductors, spin transistors, sing- spin manipulations or spin-torque MRAMs (magnetoresistive random access memories) are some of the hot topics. The importance of spin phenomena for new applications was recognized by the Royal Swedish Academy of S- ences by awarding the 2007 Nobel Prize in Physics jointly to Albert Fert and Peter Grun berg “for the discovery of giant magnetoresistance”. This – fect originates from spin-dependent scattering phenomena in a two-terminal ferromagnetic-paramagnetic-ferromagnetic junction leading to a new type of magnetic memory. The Hall e?ect and its applications remain fertile – search areas. The spin Hall e?ect, in analogy with the conventional Hall e?ect, occurs in paramagnetic systems as a result of spin-orbit interaction. Marco Fanciulli is the Director of the CNR-INFM MDM (Materials and Devices for Microelectronics) National Laboratory and Full Professor at the Department of Material Science at the University of Milano Bicocca. Resistively Detected ESR and ENDOR Experiments in Narrow and Wide Quantum Wells: A Comparative Study.- Electron-Spin Manipulation in Quantum Dot Systems.- Resistively Detected NMR in GaAs/AlGaAs.- Electron-Spin Dynamics in Self-Assembled (In,Ga)As/GaAs Quantum Dots.- Single-Electron-Spin Measurements in Si-Based Semiconductor Nanostructures.- Si/SiGe Quantum Devices, Quantum Wells, and Electron-Spin Coherence.- Electrical Detection of Electron-Spin Resonance in Two-Dimensional Systems.- Quantitative Treatment of Decoherence.- Measuring the Charge and Spin States of Electrons on Individual Dopant Atoms in Silicon.- Electron Spin as a Spectrometer of Nuclear-Spin Noise and Other Fluctuations.- A Robust and Fast Method to Compute Shallow States without Adjustable Parameters: Simulations for a Silicon-Based Qubit.- Photon-Assisted Tunneling in Quantum Dots.
